PBSS5240T,215 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  PBSS5240T,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PBSS5240T,215 Collector- Emitter Voltage Vceo Max: 40 V Configuration: Single Current - Collector (ic) (max): 2A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 210 @ 1A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 200MHz ID_COMPONENTS: 1949843 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2 A Maximum Operating Frequency: 200 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 480mW Power Dissipation: 480 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 350mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 2 A Gain Bandwidth Product fT: 200 MHz DC Collector/Base Gain hfe Min: 300 at 100 mA at 2 V, 260 at 500 mA at 2 V, 210 at 1 A at 2 V, 100 at 2 A at 2 V DC Current Gain hFE Max: 300 at 100 mA at 2 V Maximum Power Dissipation: 480 mW Factory Pack Quantity: 3000 Part # Aliases: PBSS5240T T/R Other Names: 568-4165-2, 934056607215, PBSS5240T T/R
• Количество страниц
  9 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  83,28 KB

PBSS5240T,215 datasheet скачать

PBSS5240T,215 datasheet